Patent · US Active

Winged vias to increase overlay margin

US8058177B2 · kind B2 · utility

9Cited by

14References

7Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Martin Weiss · Margertshausen, DE
Ruth A. Brain · Portland, US
Bob Bigwood · Hillsboro, US
Shannon Daviess · Hillsboro, US

Key dates

Filing date	Jul 31, 2008
Grant date	Nov 15, 2011
Priority date	—
Expiry date	Jul 31, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Winged via structures to increase overlay margin are generally described. In one example, a method comprises depositing a sacrificial layer to an interlayer dielectric, the interlayer dielectric being coupled with a semiconductor substrate, forming at least one trench structure in the sacrificial layer wherein the trench structure comprises a first direction along a length of the trench structure and a second direction along a width of the trench structure wherein the second direction is substantially perpendicular to the first direction, depositing a light sensitive material to the trench structure and the sacrificial layer, and patterning at least one winged via structure in the light sensitive material to overlay the trench structure wherein the winged via structure extends in the second direction beyond the width of the trench structure onto the sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.