High sensitivity THz signal detector and camera
US8058618B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 25, 2007 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jun 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03B17/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Taught is a high sensitivity THz detector and camera comprising an integration body of a photonic crystal THz micro-cavity and semiconductor transistor on a semiconductor base. The THz signal is localized inside of the photonic crystal micro-cavity so as to generate high intensity field in the micro-cavity. The heat effect of the THz wave therein produces electron-hole pairs in the semiconductor. The current carrier is injected into the base electrode of the transistor and is amplified therein to produce signal current in the external circuit and thus high sensitive THz signal detection is realized. Integrating many such detectors together to construct a THz resonant cavity array, each resonant cavity only receives THz light from a certain position and having certain intensity. The signal is converted and then stored to obtain a complete THz image so as to realize imaging in real-time. Special signal amplification circuit is used to eliminate THz background radiation noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.