Variable resistance nonvolatile memory apparatus
US8058636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jul 12, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory apparatus includes a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes in a state where the variable resistance layer is in the low-resistance state is RL, a resistance value between the electrodes in a state where the variable resistance layer is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting the first terminal to the second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0 satisfies RL<R0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.