Light-receiving device
US8058642B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 18, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jan 12, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.