Thin film transistor, display device, including the same, and associated methods
US8058645B2 · kind B2 · utility
461Cited by
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6Claims
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Key dates
| Filing date | Apr 1, 2009 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Sep 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.