Semiconductor memory device including a cylinder type storage node and a method of fabricating the same
US8058678B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2009 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Dec 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Provided is a semiconductor memory device including cylinder type storage nodes and a method of fabricating the semiconductor memory device. The semiconductor memory device includes: a semiconductor substrate including switching devices; a recessed insulating layer including storage contact plugs therein, wherein the storage contact plugs are electrically connected to the switching devices and the recessed insulating layer exposes at least some portions of upper surfaces and side surfaces of the storage contact plugs. The semiconductor device further includes cylinder type storage nodes each having a lower electrode. The lower electrode contacting the at least some portions of the exposed upper surfaces and side surfaces of the storage node contact plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.