Bipolar transistor

US8058704B2 · kind B2 · utility

Assignee

• Analog Devices, Inc. · US

Inventors

• Bernard Patrick Stenson · Limerick, IE
• Andrew David Bain · Limerick, IE
• Derek F. Bowers · Santa Clara, US
• Paul Malachy Daly · Limerick, IE
• Anne Maria Deignan · Limerick, IE
• Michael Thomas Dunbar · San Jose, US
• Patrick Martin McGuiness · Limerick, IE
• William Allan Lane · Carrigrohane, IE

Key dates

• Filing date: Nov 2, 2009
• Grant date: Nov 15, 2011
• Expiry date: Dec 8, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/311

Abstract

A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.