Filler for filling a gap and method for manufacturing semiconductor capacitor using the same
US8058711B2 · kind B2 · utility
8Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Nov 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S525/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3:The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.