Band-gap reference voltage generator
US8058863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2009 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jun 22, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A band-gap reference voltage generator is provided. N-channel metal oxide semiconductor (NMOS) transistors are respectively connected to bipolar transistors in parallel. A Complementary To Absolute Temperature (CTAT) voltage that is inversely proportional to absolute temperature is reduced by a threshold voltage of the NMOS transistor. A weight for a temperature coefficient of a Proportional To Absolute Temperature (PTAT) voltage that is directly proportional to absolute temperature is reduced and a resistance ratio for a temperature coefficient of 0 is reduced by about ½, thereby miniaturizing the band-gap reference voltage generator. A reference voltage lower than or equal to 1 V can be provided by resistors respectively connected to the bipolar transistors in parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.