Reduced inductance interconnect for enhanced microwave and millimeter-wave systems
US8059057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2009 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Mar 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment of the present invention, a microwave or millimeter wave module includes a dielectric layer having a pocket formed substantially through the dielectric layer. The dielectric is attached to a metal substrate. The pocket has substantially vertical sidewalls. An integrated circuit is disposed in the pocket. Opposing sides of the integrated circuit are substantially parallel to the sidewalls of the pocket. An interconnect electrically couples the integrated circuit to a bond pad disposed on the outer surface of the dielectric layer. The interconnect has a length that is minimized to result in reduced inductance of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.