Patent · US Active

3T high density nvDRAM cell

US8059458B2 · kind B2 · utility

0Cited by

126References

21Claims

0Family size

Assignee

Cypress Semiconductor Corporation · US

Inventors

Andreas Scade · Dresden, DE
Stefan Guenther · Lake Orion, US

Key dates

Filing date	Dec 31, 2007
Grant date	Nov 15, 2011
Priority date	—
Expiry date	Oct 5, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C14/0018
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory circuit includes a single transistor storing both volatile and nonvolatile bit charges.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.