Method for producing memory having a solid electrolyte material region
US8062694B2 · kind B2 · utility
2Cited by
12References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 27, 2010 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for producing a solid electrolyte material region for a memory element of a solid electrolyte memory cell. A first material is formed in substantially pure form. A thermal treatment is carried out in the presence of at least one second material, and the chalcogenide material of the solid electrolyte material region thereby being produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.