Silicon release coating, method of making same, and method of using same
US8062704B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2007 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000° C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.