Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same
US8062911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2007 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/0735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.