Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process
US8062956B2 · kind B2 · utility
1Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Aug 26, 2009 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.