Method of manufacturing semiconductor element
US8062959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2008 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.