Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US8062967B1 · kind B1 · utility
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44References
33Claims
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Key dates
| Filing date | Jun 1, 2009 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Jun 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
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