Low cost method of fabrication of vertical interconnections combined to metal top electrodes
US8062976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2010 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Jul 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/611
Abstract
A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.