Semiconductor device and fabrication method thereof
US8063439B2 · kind B2 · utility
0Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2010 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Nov 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.