Monolithic bending element
US8063544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2006 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Dec 15, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for producing a component as monolithic multilayer element or multilayer bending element, comprising at least two layer stacks each having 1-400 layers of piezoelectrically active material which are separated by at least one layer stack comprising 0-100 layers of piezoelectrically inactive material, wherein the inner electrodes of the active layer stacks contain at least the following materials: a) pure silver b) electrically non-conductive material having a proportion by weight of 0% to at most 30% and the material of the piezoelectrically active layers has a sufficient activity in a thermal process such that sintering below the melting point of the material of the inner electrodes is possible and performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.