Patent · US Active

Imaging device having a pixel structure with high dynamic range read-out signal

US8063963B2 · kind B2 · utility

7Cited by

31References

7Claims

0Family size

Assignee

On Semiconductor Image Sensor · BE

Inventor

Bart Dierickx · Mortsel, BE

Key dates

Filing date	Jan 6, 2005
Grant date	Nov 22, 2011
Priority date	—
Expiry date	Jan 1, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH04N25/77
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A method obtains a read-out signal of a pixel having at least a photosensitive element with a charge storage node. The method includes the steps of acquiring charge carriers, converted from impinging radiation on the photosensitive element, on the charge storage node, applying during the integration period at least one reset pulse, resetting incompletely the charge carriers acquired at the moment of applying the reset pulse, to obtain at least one linear response region for the pixel, and driving the pixel in weak inversion after the last incomplete reset pulse of the integration period so as to obtain a logarithmic response part. A corresponding pixel is also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.