Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus
US8064492B2 · kind B2 · utility
1Cited by
0References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2010 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Mar 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.