Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures
US8067258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Apr 5, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.