Image sensor and manufacturing method thereof
US8067740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2009 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Dec 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.