Thin film transistor with two gate electrodes
US8067775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2009 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Mar 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.