Integrated MIS photosensitive device using continuous films
US8067813B2 · kind B2 · utility
1Cited by
11References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Apr 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An integrated photosensitive device with a metal-insulator-semiconductor (MIS) photodiode constructed with one or more substantially continuous layers of semiconductor material and with a substantially continuous layer of dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.