Method of forming a corona electrode substantially of chemical vapor deposition silicon carbide and a method of ionizing gas using the same
US8067892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2009 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01T23/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a corona-producing emitter electrode by depositing substantially pure silicon carbide by CVD and forming a corona-producing emitter electrode with the deposited silicon carbide. In addition, a method of forming a corona-producing gas ionizer is provided by providing a corona electrode formed from CVD silicon carbide, electrically coupling the corona electrode to a high voltage power supply, and providing an AC or DC voltage from the high voltage power supply to the corona electrode. Furthermore, a method of ionizing gas in an environment is provided by providing a corona-producing ionizer emitter electrode formed substantially of CVD silicon carbide, electrically coupling the electrode to a high voltage power supply, and providing an AC or DC voltage from the high voltage power supply to the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.