Vanadium-dioxide front-end advanced shutter technology
US8067996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Jun 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/10
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.