Circuit board with high density power semiconductors
US8068346B2 · kind B2 · utility
2Cited by
39References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2004 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Nov 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A circuit board is provided with a plurality of MOSFETs (metal oxide semiconductor field effect transistors) each of which include a field effect transistor and an associated control circuit. The control circuits are mounted in a control section of the board remote from a power section mounting the MOSFETs. The present invention reduces the assembly steps required in the prior art wherein the MOSFET and its control circuit were mounted as preassembled units to the board. Moreover, the number of MOSFETs per unit area of board is increased by the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.