Patent · US Active

Submounts for Semiconductor Lasers

US8068524B1 · kind B1 · utility

22Cited by

0References

22Claims

0Family size

Assignee

PRANALYTICA, INC. · US

Inventors

C. Kumar N. Patel · Los Angeles, US
Arkadiy Lyakh · Santa Monica, US
Alexei Tsekoun · Los Angeles, US
Richard Maulini · Los Angeles, US

Key dates

Filing date	Dec 28, 2010
Grant date	Nov 29, 2011
Priority date	—
Expiry date	Dec 28, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3402
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.