Multi spectral sensor

US8071410B2 · kind B2 · utility

Assignee

• BAE Systems Imaging Solutions Inc. · US

Inventors

• David Wen · Northborough, US
• Xinqiao Liu · Bellevue, US
• Ahn N. Vu · Saratoga, US
• Steven Onishi · San Jose, US

Key dates

• Filing date: Dec 14, 2009
• Grant date: Dec 6, 2011
• Expiry date: Dec 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/148

Abstract

A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.