Patent · US Active

Low temperature ceramic microelectromechanical structures

US8071411B2 · kind B2 · utility

4Cited by
12References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 22, 2008
Grant dateDec 6, 2011
Priority date
Expiry dateDec 22, 2028

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0735
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method provides for processing and manufacturing is steps limiting a maximum exposure of an integrated circuit upon which the MEMS is manufactured during MEMS manufacturing to below a temperature wherein CMOS circuitry is adversely affected, for example below 400° C., and sometimes to below 300° C. or 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronic integrated circuits, such as Si CMOS circuits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.