Method of fabricating a thin film transistor using boron-doped oxide semiconductor thin film
US8071434B2 · kind B2 · utility
6Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Sep 16, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Sep 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.