Manufacturing method of a silicon carbide semiconductor device
US8071482B2 · kind B2 · utility
225Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 20, 2008 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Aug 29, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.