Gas sensor having a field-effect transistor
US8072009B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 10, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Jan 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4141
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.