Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure

US8072012B2 · kind B2 · utility

Assignees

• IMEC · BE
• Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

• Anne S. Verhulst · Houtvenne, BE
• William G. Vandenberghe · Heverlee, BE

Key dates

• Filing date: Sep 14, 2007
• Grant date: Dec 6, 2011
• Expiry date: Jun 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/123
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a heterostructure made of a different semiconducting material (e.g. germanium (Ge)) is used. An elongate monocrystalline nanostructure made of a different semiconducting material is introduced which acts as source (or alternatively drain) region of the TFET. The introduction of the heterosection is such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these elongate monocrystalline nanostructure Si/Ge TFETs resulting in ultra-high on-chip transistor densities.