Patent · US Active

Semiconductor component

US8072043B2 · kind B2 · utility

0Cited by

9References

28Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Peter Flohrs · Reutlingen, DE
Alfred Goerlach · Tübingen, DE
Peter Urbach · Gomaringen, DE
Wolfgang Feiler · Reutlingen, DE
Ning Qu · Beijing, CN
Klaus Heyers · Reutlingen, DE

Key dates

Filing date	Sep 12, 2005
Grant date	Dec 6, 2011
Priority date	—
Expiry date	Dec 18, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/209
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.