Solid-state imaging device and signal processing circuit
US8072529B2 · kind B2 · utility
5Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2004 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | May 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a semiconductor substrate having a principal surface, and three or more pixel regions formed in at least one direction of two different directions along the principal surface of the semiconductor substrate. Each pixel region includes a plurality of photoelectric conversion regions having different sensitivities. The photoelectric conversion region having the highest sensitivity in peripheral pixel regions of the pixel regions has a higher sensitivity than the photoelectric conversion region having the highest sensitivity in a central pixel region of the pixel regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.