Patent · US Active

Laser diode with improved heat dissipation

US8073031B2 · kind B2 · utility

2Cited by

5References

21Claims

0Family size

Assignee

SHARP KABUSHIKI KAISHA · JP

Inventors

Wei Sin TAN · Nanhu, CN
Jennifer Mary Barnes · Felton, GB

Key dates

Filing date	Mar 3, 2008
Grant date	Dec 6, 2011
Priority date	—
Expiry date	Mar 3, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/18
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.