Method for the production of photo-patterned carbon electronics
US8076218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jan 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a first doping agent precursor and the first doping agent precursor and first layer of carbon based semiconductor are irradiated with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of the first layer of carbon based semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.