Thin-film deposition and recirculation of a semi-conductor material
US8076224B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jul 6, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at the substrate, the substrate having a temperature below the condensation temperature of the semiconductor material thereby depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material; and circulating the undeposited semiconductor material into the fluid mixture having a temperature above the condensation temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.