Methods of forming an amorphous silicon thin film
US8076242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jun 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.