Systems and methods for adapting parameters to increase throughput during laser-based wafer processing
US8076605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | May 22, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2101/40
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.