Patent · US Active

Light-emitting diode chip and method of manufacturing the same

US8076675B2 · kind B2 · utility

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13Claims
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Assignee

Inventor

Key dates

Filing dateDec 30, 2009
Grant dateDec 13, 2011
Priority date
Expiry dateApr 10, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/819

Abstract

An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite to the second surface. The p-n junction type semiconductor light-emitting structure is arranged on the first surface of the substrate. A plurality of blind holes is defined in the second surface of the substrate and extends from the second surface towards the first surface. A heat conductive material is filled in each of the plurality of blind holes thereby forming a plurality of heat conductive poles in the plurality of blind holes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.