Nitride-based semiconductor light-emitting diode and illuminating device
US8076679B2 · kind B2 · utility
3Cited by
6References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 18, 2005 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Oct 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldPharmaceuticals
- WIPO sectorChemistry
Abstract
A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.