Light emitting diode and manufacturing method thereof
US8076686B2 · kind B2 · utility
6Cited by
1References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 2008 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Oct 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.