Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems

US8076699B2 · kind B2 · utility

Assignee

• The Hong Kong Univ. of Science and Technology · CN

Inventors

• Jing-Wei Chen · Jinshanmian, TW
• Wanjun CHEN · Chengdu, CN
• Chunhua Zhou · Suzhou, CN

Key dates

• Filing date: Mar 31, 2009
• Grant date: Dec 13, 2011
• Expiry date: Sep 27, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a shorted ohmic contact and a Schottky contact, and a cathode containing an ohmic contact, while the HEMT preferably has a gate containing a Schottky contact. Two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the (electron gas) channels in both structures at the hetero-interface between the epitaxial layers.