Silicide-interface polysilicon resistor

US8076754B2 · kind B2 · utility

Assignee

• Silicon Laboratories Inc. · US

Inventors

• Steven G. Young · Mission Viejo, US
• David M. Szmyd · Albuquerque, US

Key dates

• Filing date: Mar 9, 2007
• Grant date: Dec 13, 2011
• Expiry date: Mar 9, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/43

Abstract

A silicide-interface polysilicon resistor is disclosed. The silicide-interface polysilicon resistor includes a substrate, an oxide layer located on top of the substrate, and a polysilicon layer located on top of the oxide layer. The polysilicon layer includes multiple semiconductor junctions. The silicide-interface polysilicon resistor also includes a layer of silicide sheets, and at least one of the silicon sheets is in contact with one of the semiconductor junctions located within the polysilicon layer.