Semiconductor device having metal cap divided by slit
US8076771B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2008 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to reduce a thermal stress applied by a metal cap to a semiconductor chip: a semiconductor chip (2) is bonded to a flat portion (11) of a metal cap (1); side wall portions of the metal cap (1) serve as external connection terminals (13); and a slit (7) is formed in the metal cap (1) so as to cross the semiconductor chip (2), so a bonding region between the semiconductor chip (2) and the metal cap (1) is divided into small bonding regions to reduce thermal stresses applied to the respective bonding regions. Therefore, peeling can be prevented in respective bonding regions, whereby a small-size semiconductor device in which the semiconductor chip is bonded to the metal cap with improved bonding reliability is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.