Plasma device with low thermal noise
US8077094B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Nov 27, 2008 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jul 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A plasma device having low thermal noise, which results in a high signal-to-noise ratio (SNR) of the plasma device. The plasma device includes devices with a plasma that is responsive to electromagnetic radiation and/or electrical signals. In various configurations, the plasma device has a plasma in which the temperature, resistance, pressure, and/or collision frequency are at a level sufficiently low to produce an acceptable level of noise. In another configuration, the operating frequency of the plasma device is at a level sufficiently high to produce an acceptable level of noise. Decreasing the noise level results in increasing the signal-to-noise ratio and increasing the data rate. The plasma temperature is reduced by operating the plasma device in the afterglow state. The plasma electron temperature is reduced by confining high energy electrons in a potential well and by using an electron emitting filament.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.